Nitride-based laser diodes and superluminescent diodes

Cleaved and Etched Facet Nitride Laser Diodes

Room-temperature (RT) pulsed operation of blue (420 nm) nitride-based multiquantum-well laser diodes grown on a-plane and c-plane sapphire substrates has been demonstrated. Structures investigated include etched and cleaved facets as well as doped and undoped quantum wells. A combination of atmospheric and low-pressure metal organic chemical vapor deposition using a modified two-flow horizontal...

Coherence Length Characteristics from Broadband Semiconductor Emitters: Superluminescent Diodes versus Broadband Laser Diodes

This paper reports on the measurement and analysis of the coherence function for broadband emitters such as superluminescent diodes (SLDs) and novel broadband laser diodes (BLDs) from self-assembled InGaAs/GaAs quantumdot (QD) and InAs/InP quantum-dash (Qdash) structures that emit at center wavelengths of 1150nm and 1650nm, respectively. Using the fiber-based spectral interferometry system, coh...

Laser Micromachining for Gallium Nitride Based Light-Emitting Diodes

InGaN-BASED LASER DIODES

UV InGaN and GaN single-quantum well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire, but only for highcurrent operation. At low-current operation, both LEDs ...

Frequency-converted dilute nitride laser diodes for mobile display applications

We demonstrate a 1240-nm GaInNAs multi-quantum well laser diode with an integrated saturable electro-absorber whose wavelength is converted to 620 nm. For conversion, we used a MgO:LN nonlinear waveguide crystal with an integrated Bragg grating in direct coupling configuration. Broadened visible spectral width and reduced speckle as well as a high extinction ratio between the below and above th...